Semiconductor device manufacturing: process – Semiconductor substrate dicing – Having specified scribe region structure
Reexamination Certificate
2011-03-01
2011-03-01
Brewster, William M. (Department: 2823)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
Having specified scribe region structure
C438S463000, C438S464000
Reexamination Certificate
active
07897485
ABSTRACT:
Methods for processing semiconductor wafers are described herein. One embodiment includes removing portions of a first side of the semiconductor wafer to form a number of trenches of a particular depth in rows and columns. The method further includes forming a passivation layer on side walls of the number of trenches. The method also includes cutting a second side of the semiconductor wafer in rows and columns aligned with the number of trenches such that the semiconductor wafer singulates into a number of dice.
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Brewster William M.
Brooks, Cameron & Huesbch, PLLC
Micro)n Technology, Inc.
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