Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-02-01
2005-02-01
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S730000, C438S974000
Reexamination Certificate
active
06849555
ABSTRACT:
An integrated in situ cluster type wafer processing apparatus which can be used for forming metal wiring layers having a multi-layered structure and a wafer processing method using the same are provided. The wafer processing apparatus includes a transfer chamber which can be exhausted and has a plurality of gate valves, a plurality of vacuum processing chambers each of which can be connected to the transfer chamber via one of the gate valves, and a load lock chamber which can be exhausted and is connectable to a first gas feed line for feeding an oxygen-based gas into the load lock chamber. In a wafer processing method, a predetermined layer is formed on a wafer in one of the vacuum processing chambers. The predetermined layer on the wafer is oxidized in the load lock chamber or an oxygen atmosphere chamber.
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Choi Gil-heyun
Kim Byung-hee
Lee Jong-myeong
Lee Myoung bum
Yun Ju-young
Dang Phuc T.
Myers Bigel & Sibley & Sajovec
Samsung Electronics Co,. Ltd.
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