Wafer processing apparatus

Details Wafer processing apparatus Wafer processing apparatus

1988-12-05

1989-10-24

Nguyen, Nam X.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

2041921, 156345, C23C 1434, C23F 102

Patent

active

048759899

ABSTRACT:
A processing apparatus and method for edge-preferential processing of partially fabricated integrated circuit wafers or of other substantially flat and thin workpieces. A plasma remote from the workpiece is used to generate activated species, and a baffle which is in proximity to the wafer face but not in contact with it is used to direct the stream of activated species. This module can be set up to perform both edge bead removal and bake of spun-on photoresist.

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patent: 4664747 (1987-05-01), Sekiguchi et al.
patent: 4687544 (1987-08-01), Bersin
patent: 4718976 (1988-01-01), Fujimura
Fleming et al., "Development . . . Reactor", J. Vac. Sci. Technol., 17(1), Jan./Feb. 1980, pp. 337-341.
Ishimaru et al., "Sealing . . . Helicoflex", Vacuum, vol. 32, No. 1, p. 33-37, 1982.
Ishimaru et al., "Bakeable . . . Vacuum", IEEE Transaction on Nuclear Science, vol. NS-26, No. 3, 6/79; 4000-4002.
Malczewski et al., "Measurement . . . Stream", Solid State Technol., 4/86, pp. 151-157.

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