Wafer passivation structure and method of fabrication

Details Wafer passivation structure and method of fabrication Wafer passivation structure and method of fabrication

2005-04-05

2005-04-05

Guerrero, Maria F. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S613000, C438S614000, C438S624000, C438S627000, C438S637000, C438S958000

Reexamination Certificate

active

06875681

ABSTRACT:
A wafer passivation structure and its method of fabrication is described. According to one embodiment of the present invention a metal layer having a bond pad spaced by a gap from a metal member is formed on a substrate. A first dielectric layer is then formed over the bond pad and the metal member and completely fills the gap. Next a second dielectric layer, having a dielectric constant greater than the first dielectric layer and being hermetic is formed over the first dielectric layer. In another embodiment of the present invention a first dielectric layer is formed on the top surface of a bond pad of a substrate. A second dielectric layer is then formed on the first dielectric. An opening is then formed through the first and second dielectric layers so as to expose the top surface of the bond pad. A barrier layer is then deposited on the sides of the opening and on the top surface of the bond pad. A contact is then formed on the barrier layer in the opening.

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