Wafer-level thick film standing-wave clocking

Details Wafer-level thick film standing-wave clocking Wafer-level thick film standing-wave clocking

2006-03-14

2006-03-14

Wilson, Christian D. (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S599000, C438S666000

Reexamination Certificate

active

07012015

ABSTRACT:
An embodiment of the present invention is a technique to distribute clock. At least a metal layer is formed to have a standing-wave structure to distribute a clock signal to receiver end points from a clock source such that the receiver end points are substantially electrically equivalent with respect to the clock source. The metal layer is embedded in dielectric layers made of thick film using a wafer-level thick film (WLTF) process.

REFERENCES:
patent: 6037822 (2000-03-01), Rao et al.
patent: 6522186 (2003-02-01), O'Mahony et al.
patent: 6720814 (2004-04-01), Braunisch et al.

Affiliated with

Also associated with

Rating

Wafer-level thick film standing-wave clocking does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Wafer-level thick film standing-wave clocking, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Wafer-level thick film standing-wave clocking will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3603694