Wafer level processing for backside illuminated sensors

Details Wafer level processing for backside illuminated sensors Wafer level processing for backside illuminated sensors

2008-07-09

2010-12-28

Chen, Jack (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S431000, C257S447000, C257S460000, C257SE27133

Reexamination Certificate

active

07859033

ABSTRACT:
A backside illuminated image sensor comprises a sensor layer having a plurality of photosensitive elements of a pixel array, an oxide layer adjacent a backside surface of the sensor layer, and at least one dielectric layer adjacent a frontside surface of the sensor layer. A color filter array is formed on a backside surface of the oxide layer, and a transparent cover is attached to the backside surface of the oxide layer overlying the color filter array. Redistribution metal conductors are in electrical contact with respective bond pad conductors through respective openings in the dielectric layer. A redistribution passivation layer is formed over the redistribution metal conductors, and contact metallizations are in electrical contact with respective ones of the respective redistribution metal conductors through respective openings in the redistribution passivation layer. The image sensor may be implemented in a digital camera or other type of digital imaging device.

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T. Joy et al., “Development of a Production-Ready, Back-Illuminated CMOS Image Sensor with Small Pixels,” IEEE IEDM, Dec. 2007, pp. 1007-1010.

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