Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2006-08-01
2009-12-22
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S106000, C438S456000, C438S458000, C438S459000, C438S464000
Reexamination Certificate
active
07635636
ABSTRACT:
An electro-mechanical device package includes a cap material permanently bonded to a device wafer encapsulating an electromechanical device. An intermediate material is used to bond the device and capping material together at a low temperature, and a structure including the intermediate material emanating from either the device or cap material, or both, provides an interlocking at the bonding interface. One package includes a reusable carrier wafer with a similar coefficient of thermal expansion as a mating material and a low cost cap wafer of different material than the device wafer. A method for temporarily bonding the cap material to the carrier wafer includes attaching the cap material to the carrier wafer and is then singulated to mitigate thermal expansion mismatch with the device wafer.
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Chocola Jack
Grama George
Lin Kevin K.
McClure Michael T.
Allen Dyer Doppelt Milbrath & Gilchrist, P.A.
Duong Khanh B.
Smith Zandra
Triquint Semiconductor, Inc.
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