Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2005-09-20
2005-09-20
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S675000, C257S676000, C257S712000, C257S713000, C257S717000, C257S720000, C257S666000, C257S684000, C257S796000, C257S698000, C257S706000, C361S704000, C361S718000
Reexamination Certificate
active
06946729
ABSTRACT:
A wafer level package structure and a method for packaging said wafer level package structure are described. The wafer level package structure at least comprises a die, a heat slug covering said die, a carrier for supporting said heat slug and said die, a plurality of wires electrically connecting said die and said carrier, and a mould compound encapsulating said die, said carrier, said heat slug and said wires. The method comprises the steps of: (a)providing a heat slug metal with a plurality of openings; (b)mounting said heat slug metal onto a wafer to dispose said openings on corresponding bonding pads of the wafer so as to expose said bonding pads; (c)sawing said combined heat slug metal and wafer into a plurality of die units; (d)attaching said die unit onto a carrier; (e)electrically connecting a plurality of wires to said die unit and said carrier; (f)encapsulating said wired die unit and said carrier. In the present invention, the heat slug metal and wafer can be sawed into a plurality of die units at the same time to improve the defect of the complicated process of individually sawing heat slug metal and wafer and individually combining heat slug metal and wafer in the conventional method.
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Lee Chun-Chi
Tao Su
Advanced Semiconductor Engineering Inc.
Seyfarth Shaw LLP
Williams Alexander Oscar
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