Wafer level package structure, and sensor device obtained...

Details Wafer level package structure, and sensor device obtained... Wafer level package structure, and sensor device obtained...

2006-11-24

2011-11-29

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Test or calibration structure

C438S017000, C257S417000, C257S415000, C257S419000, C257S254000

Reexamination Certificate

active

08067769

ABSTRACT:
A wafer level package structure with a plurality of compact sensors such as acceleration sensors and gyro sensors is provided. This package structure is composed of a semiconductor wafer with plural sensor units, and a pair of package wafers bonded to both surfaces of the semiconductor wafer. Each of the sensor units has a frame having an opening, a movable portion held in the opening to be movable relative to the frame, and a detecting portion for outputting an electric signal according to a positional displacement of the movable portion. Since the semiconductor wafer is bonded to each of the package wafers by a solid-phase direct bonding without diffusion between a surface-activated region formed on the frame and a surface-activated region formed on the package wafer, it is possible to prevent that variations in sensor characteristics occur due to residual stress at the bonding interface.

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