Wafer level package for surface acoustic wave device and...

Details Wafer level package for surface acoustic wave device and... Wafer level package for surface acoustic wave device and...

2006-06-07

2009-06-09

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Temperature

C257S416000, C257S355000, C257S678000, C257S733000, C257S787000, C257S796000, C257SE23001, C257SE23194

Reexamination Certificate

active

07545017

ABSTRACT:
A wafer level package for a surface acoustic wave (SAW) device and a fabrication method thereof. The SAW device wafer level package includes a SAW device in which a SAW element is formed on a top surface of a device wafer, a cap wafer which is bonded with a top surface of the SAW device and has a viahole penetrating the cap wafer, and a conductive member to fill a part of the viahole. The viahole has a first via portion and a second via portion, the first via portion has a gradually smaller diameter from a bottom surface of the cap wafer until a certain depth, and the second via portion has a gradually greater diameter from the first via portion until a top surface of the cap wafer.

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patent: 1432123 (2004-06-01), None
patent: 08-213874 (1996-08-01), None

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