Wafer-level In-P Si bonding for silicon photonic apparatus

Details Wafer-level In-P Si bonding for silicon photonic apparatus Wafer-level In-P Si bonding for silicon photonic apparatus

2010-04-02

2011-12-27

Geyer, Scott B (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Having diverse electrical device

C438S045000, C438S046000, C438S458000, C438S518000

Reexamination Certificate

active

08084282

ABSTRACT:
Wafer-level bonding of the hybrid laser portion of a silicon photonics platform is done by forming a weakened level in a semiconductive pillar that supports laser-active layers by ion implantation into the semiconductive pillar without penetrating the laser-active layers, and by separating the laser-active layers from the semiconductive pillar by cracking the weakened level by an epitaxial lift-off processes.

REFERENCES:
patent: 6562127 (2003-05-01), Kud et al.

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