Wafer-level fabrication of lidded chips with...

Details Wafer-level fabrication of lidded chips with... Wafer-level fabrication of lidded chips with...

2007-04-25

2010-10-05

Brewster, William M (Department: 2823)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Making plural separate devices

C438S106000, C438S121000, C438S122000, C438S124000, C257S693000, C257S037000, C257SE21502, C257SE23010

Reexamination Certificate

active

07807508

ABSTRACT:
A method is provided for fabricating a unit including a semiconductor element such as a sensor unit, e.g., for optical imaging. A semiconductor element has plurality of conductive features exposed at the front surface and semiconductive or conductive material exposed at at least one of the front and rear surfaces. At least some of the conductive features are insulated from the exposed semiconductive or conductive material. By electrodeposition, an insulative layer is formed to overlie the at least one of exposed semiconductive material or conductive material. Subsequently, a plurality of conductive contacts and a plurality of conductive traces are formed overlying the electrodeposited insulative layer, the conductive traces connecting the conductive features to the conductive contacts on the rear surface. The unit can be incorporated in a camera module having an optical element in registration with an imaging area of the semiconductor element.

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