Wafer-level diamond spreader

Details Wafer-level diamond spreader Wafer-level diamond spreader

2008-07-08

2008-07-08

Coleman, W. David (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With provision for cooling the housing or its contents

C257SE23101

Reexamination Certificate

active

11295623

ABSTRACT:
An embodiment of the present invention is a technique to heat spread at wafer level. A silicon wafer is thinned. A chemical vapor deposition diamond (CVDD) wafer processed. The CVDD wafer is bonded to the thinned silicon wafer to form a bonded wafer. Metallization is plated on back side of the CVDD wafer. The CVDD wafer is reflowed to flatten the back side.

REFERENCES:
patent: 5294381 (1994-03-01), Iguchi et al.
patent: 6030885 (2000-02-01), Bothra
patent: 6333522 (2001-12-01), Inoue et al.
patent: 6451120 (2002-09-01), Hubbard et al.
patent: 6984888 (2006-01-01), Sung

Affiliated with

Also associated with

Rating

Wafer-level diamond spreader does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Wafer-level diamond spreader, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Wafer-level diamond spreader will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3928687