Wafer-level diamond spreader

Details Wafer-level diamond spreader Wafer-level diamond spreader

2006-03-14

2006-03-14

Geyer, Scott (Department: 2812)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S105000

Reexamination Certificate

active

07012011

ABSTRACT:
An embodiment of the present invention is a technique to heat spread at wafer level. A silicon wafer is thinned. A chemical vapor deposition diamond (CVDD) wafer processed. The CVDD wafer is bonded to the thinned silicon wafer to form a bonded wafer. Metallization is plated on back side of the CVDD wafer. The CVDD wafer is reflowed to flatten the back side.

REFERENCES:
patent: 4981818 (1991-01-01), Anthony et al.
patent: 5131963 (1992-07-01), Ravi
patent: 5622586 (1997-04-01), Vaitkus et al.
patent: 6428399 (2002-08-01), Tanabe et al.

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