Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2008-07-01
2008-07-01
Lee, Eugene (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257SE23060, C257SE23061, C257SE23070, C257SE23145, C257SE21506, C257S692000, C438S597000
Reexamination Certificate
active
11559129
ABSTRACT:
The present invention provide a wafer level chip size packaged chip device with a N-shape junction at which external leads electrically connect to peripheral arrayed compatible pads and a method of fabricating the same. In the wafer level chip size package, with such an n-shape junction instead of a conventional T-shape junction observed in Shellcase type wafer level chip size package technology, electrical connections between compatible pads and external leads are more reliable due to larger connection area than the counterpart in the T-shape junction.
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Wang Qingwei
Wang Wei
Wang Youjun
Xu Qinqin
Yu Guoqing
Allen Dyer Doppelt Milbrath & Gilchrist, P.A.
China Wafer Level CSP Ltd.
Gumedzoe Peniel M
Lee Eugene
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