Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package
Reexamination Certificate
2006-11-13
2010-02-16
Potter, Roy K (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
C257S690000, C257SE21499, C257SE23180
Reexamination Certificate
active
07663213
ABSTRACT:
The present invention disclosed a wafer level chip size packaged chip device with a double-layer lead structure and methods of fabricating the same. The double-layer lead is designed to meet a tendency of increasing quantity per area of peripheral arrayed compatible pads on a semiconductor chip, and also to save more space for layout of lead on the chip bottom surface for avoiding potential short inbetween which happen in increasing probability with increasing quantity per area on the condition of one-layer lead.
REFERENCES:
patent: 6646289 (2003-11-01), Badehi
patent: 6777767 (2004-08-01), Badehi
patent: 6972480 (2005-12-01), Zilber et al.
Wang Qingwei
Wang Wei
Wang Youjun
Xu Qinqin
Yu Guoqing
Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A. Attorneys
China Wafer Level CSP Ltd.
Potter Roy K
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