Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Configuration or pattern of bonds
Reexamination Certificate
2002-11-15
2011-11-15
Clark, Sheila V (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Configuration or pattern of bonds
C257S781000, C438S614000
Reexamination Certificate
active
08058735
ABSTRACT:
A wafer level chip scale package having stud bumps and a method for fabricating the same are described. The wafer level chip scale package includes a silicon substrate having a passivation layer and a chip pad on its top surface; a stud bump being formed on the chip pad and encircled by a first insulating layer; a re-distributed line (RDL) pattern being formed on the same horizontal surface as the first insulating layer and the stud bump, the RDL pattern for connecting the stud bump and a solder bump; a second insulating layer for insulating the RDL pattern so that a portion of the RDL pattern that is connected with the solder bump is exposed; and the solder bump being attached to the exposed portion if the RDL pattern.
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John H. Lau(Ed.),Flip Chip Technologies(1996), pp. 301-314, McGraw-Hill, Boston, Massachusetts, USA.
Choi Yoon-hwa
Lee Sang-do
Clark Sheila V
Fairchild Korea Semiconductor LTD
Horton Kenneth E.
Kirton & McConkie
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