Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-05-17
1996-09-17
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257187, 257192, 257289, H01L 31062, H01L 31113
Patent
active
055571204
ABSTRACT:
A full wafer to full wafer integrated circuit apparatus wherein substrate removal and replacement on one wafer has been used to enable an accurate alignment of this wafer with features of a receiving wafer during a see through alignment step. The invention is disclosed in terms of a wafer of photo field effect transistors being combined with a wafer of circuit devices that attend the photo feed effect transistor devices. Use of the invention with the different material combination option desired for a photodetector device and its attending circuitry is also disclosed. Advantages over the more conventional chip by chip combination of wafer devices are also disclosed.
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patent: 4774205 (1988-09-01), Choi et al.
patent: 4833512 (1989-05-01), Thompson
patent: 4900591 (1990-02-01), Bennett et al.
patent: 5008213 (1991-04-01), Kolesar, Jr.
patent: 5170228 (1992-12-01), Sasaki
patent: 5404581 (1995-04-01), Honjo
Davis Andrew
Lorenzo Joseph P.
Martin Eric A.
Vaccaro Kenneth
Hollins Gerald B.
Kundert Thomas L.
Ngo Ngan V.
The United States of America as represented by the Secretary of
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