Wafer including an In-containing-compound semiconductor...

Details Wafer including an In-containing-compound semiconductor... Wafer including an In-containing-compound semiconductor...

2006-04-25

2006-04-25

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

With measuring or testing

C438S016000, C438S018000

Reexamination Certificate

active

07033844

ABSTRACT:
Method for non-invasively profiling carrier concentration in In-containing compound semiconductor wafers that enables employing the profiled wafers themselves in semiconductor device applications. The method, which using the C/V technique profiles carrier concentration in wafers including an In-containing-compound semiconductor surface layer, is characterized in non-invasively profiling carrier concentration by contacting a liquid electrode on the wafer surface, and without using photo-etching, employing an applied voltage that is up to a voltage surpassing 10V.

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patent: 6501101 (2002-12-01), Murakami et al.
R. T. Green, D. K. Walker, and C. M. Wolfe, “An Improved Method for the Electrochemical C-V Profiling of Indium Phosphide,”J. Electrochem. Soc., vol. 133, 1986, pp. 2278-2283.
V. Gopal, et al., “Electrochemical Capacitance Voltage Profiling of the Narrow Band Gap Semiconductor InAs,” Journal of Electronic Materials, vol. 29, No. 11, 2000 pp. 1333-1339.
H. Yoshitake, “CV Evaluation Apparatus,” Collection of Toshiba Technology Disclosure, vol. 16-17, Mar. 23, 1998, p. 139.

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