Wafer holding member

Details Wafer holding member Wafer holding member

1996-01-30

2000-10-17

Paik, Sam

Electric heating

Heating devices

With heating unit structure

252508, 501153, H05B 344, H01B 106, C04B 3510

Patent

active

061335576

ABSTRACT:
A wafer holding member comprises a ceramic base body and a heating resistor, an electrostatic adhesion electrode or a plasma generation electrode embedded in the base body. The wafer holding member exhibits reduced thermal expansion and greater corrosion resistance against halogenic gases. The heating resistor is made of a mixture containing 90 to 99 wt % of at least one of W, Mo, WC, TiC and TiN (the first component), and 1 to 10 wt % of AlN (the second component), the electrostatic adhesion electrode is made of a mixture containing 50 to 99 wt % of said first component, and 1 to 50 wt % of said second component, and the plasma generation electrode is made of a mixture containing 80 to 99 wt % of said first component, and 1 to 20 wt % of said second component. When heating resistors are used, the ceramic base body can include a plurality of heating resistors embedded in the base body and energized successively, with the ratio of the resistance value of the heating resistor numbered m to the resistance value of the heating resistor numbered m-1 is in a range of 1.5 to 4. The ceramic holding member can comprise a corrosion-resistant member made of an aluminum nitride based sintered body and more particularly, at least the mounting surface that holds the wafer is made of 99 wt % or more AlN and 1500 ppm or less of silicon.

REFERENCES:
patent: 5264681 (1993-11-01), Nozaki et al.
patent: 5280156 (1994-01-01), Niori et al.
patent: 5306895 (1994-04-01), Ushikoshi et al.
patent: 5366585 (1994-11-01), Robertson et al.
patent: 5560851 (1996-10-01), Thimm et al.
patent: 5683606 (1997-11-01), Ushikoshi et al.
patent: 5985035 (1999-11-01), Tamura et al.

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