Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Reexamination Certificate
2005-05-02
2009-11-24
Phung, Anh (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
C257S421000, C257SE21524, C257SE21665, C257SE27006
Reexamination Certificate
active
07622735
ABSTRACT:
Probes are electrically connected to a surface of a tunnel junction film stack comprising a free layer, a tunnel barrier, and a pinned layer. Resistances are determined for a variety of probe spacings and for a number of magnetizations of one of the layers of the stack. The probe spacings are a distance from a length scale, which is related to the Resistance-Area (RA) product of the tunnel junction film stack. Spacings from as small as possible to about 40 times the length scale are used. Beneficially, the smallest spacing between probes used during a resistance measurement is under 100 microns. A measured in-plane MagnetoResistance (MR) curve is determined from the “high” and “low” resistances that occur at the two magnetizations of this layer. The RA product, resistances per square of the free and pinned layers, and perpendicular MR are determined through curve fitting.
REFERENCES:
patent: 5475304 (1995-12-01), Prinz
patent: 5721488 (1998-02-01), Sakai et al.
patent: 5854554 (1998-12-01), Tomita et al.
patent: 6111784 (2000-08-01), Nishimura
patent: 8219213 (2001-04-01), Goto et al.
patent: 6294911 (2001-09-01), Shimazawa et al.
patent: 6381107 (2002-04-01), Redon et al.
patent: 6538430 (2003-03-01), Carrington et al.
patent: 6552554 (2003-04-01), Prinz et al.
patent: 6657431 (2003-12-01), Xiao
patent: 2008/0164872 (2008-07-01), Worledge
Capers The microscopic four point probe Webpage date May 2001.
Abraham David William
Schmid Joerg Dietrich
Trouilloud Philip Louis
Worledge Daniel Christopher
International Business Machines - Corporation
Lulis Michael
Phung Anh
Ryan & Mason & Lewis, LLP
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