Wafer etching techniques

Details Wafer etching techniques Wafer etching techniques

2006-07-25

2006-07-25

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S719000

Reexamination Certificate

active

07081411

ABSTRACT:
A method (10) for etching a through via (116, 118) on a wafer (100) of semiconductor material (102), wherein the wafer (100) has a front side surface (110) and a backside surface (106), is described. A layer of photoresist material (104) is applied to the backside surface (106). The layer of photoresist (104) is then exposed to a light source through a mask having a pre-selected pattern, wherein the developed photoresist is removed to form at least one via (112, 114) in the remaining photoresist layer (104). The remaining photoresist layer (104′) is then baked in order to form a hardened, remaining photoresist layer (104″). The semiconductor material 102 adjacent to the at least one via (112, 114) is then gas plasma etched to form a through via (116, 118) between the backside surface (106) and the front side surface (110). The hardened, remaining photoresist layer (104″) is then removed and a layer of conductive material (120) is then applied to the surface of the through via (116, 118) to establish electrical connectivity between the backside surface (106) and the front side surface (110).

REFERENCES:
patent: 4959705 (1990-09-01), Lemnios et al.
patent: 5338394 (1994-08-01), Fathimulla et al.
patent: 5395799 (1995-03-01), Yu
patent: 6348301 (2002-02-01), Lin
patent: 6406995 (2002-06-01), Hussein et al.
patent: 6462419 (2002-10-01), Asai
patent: 6468889 (2002-10-01), Iacoponi et al.
patent: 6635185 (2003-10-01), Demmin et al.
patent: 6649082 (2003-11-01), Hayasaka et al.
patent: 6864172 (2005-03-01), Noma et al.
patent: 6873054 (2005-03-01), Miyazawa et al.
patent: 2002/0088608 (2002-07-01), Park
patent: 2004/0063268 (2004-04-01), Noma et al.
patent: 2005/0098855 (2005-05-01), Shimoji et al.
patent: 1082629 (1989-03-01), None
Khare, et al., “CH4/H2/Ar/Cl2 electron cyclotron resonance plasma etching of via holes for InP-based microwave devices”, Journal of Vacuum Science & Technology, Sep./Oct. 1994.
Pgs. 2947-2951, vol. 12, No. 5, American Institute of Physics, New York, USA.
Hur, et al., “Reactive ion etching of InP via holes”, Journal of Vacuum Science & Technology, May/Jun. 1994, pp. 1410-1412, vol. 12, No. 3, American Institute of Physics, NY.

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