Wafer etch protection method

Details Wafer etch protection method Wafer etch protection method

1992-12-09

1995-02-07

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156662, 1566951, 156649, H01L 2100

Patent

active

053873165

ABSTRACT:
A method of etching a semiconductor wafer includes providing a wafer having a portion thereof to be etched. A highly doped region is formed in the periphery of the wafer which is subsequently etched. The highly doped region of the wafer is substantially etch resistant to an etchant relative to the portion of the wafer being etched.

REFERENCES:
patent: 4092209 (1978-05-01), Ipri
patent: 4318936 (1982-03-01), Moss et al.
patent: 4943719 (1990-07-01), Akamine
patent: 5141596 (1992-08-01), Hawkins et al.
"Study of The Orientation Dependent Etching and Initial Anodization of Si in Aqueous KOH"; J. Electrochem Society; vol. 130; No. 6; 6-83; Faust et al.; pp. 1413-1420.
"Highly Selective KOH-Based Etchant For Boron-Doped Silicon Structures"; Microelectron, Eng.; vol. 9; no. 1.varies.4; Bassorus et al.; 5-89'; abstract only.
"Anisotropic Etching of Crystalline Silicon In Alkaline Solutions, II Influence of Dopants"; J. Electrochem. Soc.; vol. 137; No. 11; Nov. 1990 Seidell et al.; abstract only.

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