Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...
Patent
1997-12-04
1999-07-27
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With peripheral feature due to separation of smaller...
257643, H01L 2331
Patent
active
059295090
ABSTRACT:
A wafer edge seal ring structure is disclosed to provide reduced particulate contaminant generation during wafer processing of high density integrated circuits. The structure is formed by delimiting the deposition of layers at the peripheral edges of wafers. It is shown that as each layer is deposited and then essentially trimmed back from the edge of the wafer through a judicious use of mask and etching, and/or edge-bead rinsing (EBR) and later sealed by wafer edge exposure (WEE), the otherwise present abnormal growth of layers are prevented from building up into protrusions at the edge of wafer that later peel or break up to form particulate matter and fine dust. The method, which is also disclosed, teaches how each layer is recessed at appropriate distances from the wafer edge and how the whole ring structure is sealed against attacking particles.
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Lin Hui-Tzu
Shen Chih-Heng
Ackerman Stephen B.
Guay John
Saile George O.
Taiwan Semiconductor Manufacturing Company , Ltd.
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