Wafer edge-defect detection and capacitive probe therefor

Electricity: measuring and testing – Impedance – admittance or other quantities representative of... – Lumped type parameters

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C324S686000, C324S754090

Reexamination Certificate

active

07629798

ABSTRACT:
A wafer edge-defect detection system with a probe assembly having one or more capacitive plates conforming in edge shape to an edge shape of a wafer; and processing electronics for electronically driving the one or more capacitive plates and for sensing an electrical signal representing capacitance between each one or more plates and the wafer. Filtering and demodulation techniques enhance the signal to noise ratio.

REFERENCES:
patent: 4158171 (1979-06-01), Abbe et al.
patent: 4849916 (1989-07-01), Abbe et al.
patent: 4958129 (1990-09-01), Poduje et al.
patent: 6867855 (2005-03-01), Go et al.
patent: 7280200 (2007-10-01), Plemmons et al.
patent: 7366344 (2008-04-01), Sim

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Wafer edge-defect detection and capacitive probe therefor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Wafer edge-defect detection and capacitive probe therefor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Wafer edge-defect detection and capacitive probe therefor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4118661

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.