Wafer dividing method

Semiconductor device manufacturing: process – Semiconductor substrate dicing – By electromagnetic irradiation

Reexamination Certificate

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C257SE21598

Reexamination Certificate

active

07459378

ABSTRACT:
A method of dividing a wafer having a plurality of micro electro mechanical systems and a plurality of streets for partitioning the micro electro mechanical systems formed on the front surface of a wafer substrate, the method comprising a protective tape affixing step for affixing a protective tape to the front surface of the wafer; a cut groove-forming step for forming a cut groove by cutting the wafer having the protective tape affixed thereto along the streets from the back surface of the wafer substrate, leaving a cutting margin having a predetermined thickness on the front surface side of the wafer substrate; and a cutting step for cutting the cutting margins by applying a laser beam to the cutting margins of the cut grooves formed along the streets.

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patent: 4355457 (1982-10-01), Barlett et al.
patent: 6420206 (2002-07-01), Le et al.
patent: 6498075 (2002-12-01), Fujimoto et al.
patent: 6730579 (2004-05-01), Sasaka
patent: 6734083 (2004-05-01), Kobayashi
patent: 7129114 (2006-10-01), Akram
patent: 2006/0079024 (2006-04-01), Akram
patent: 361095544 (1986-05-01), None
patent: 2001-85365 (2001-03-01), None

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