Wafer dividing method

Details Wafer dividing method Wafer dividing method

2007-06-19

2007-06-19

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

C438S461000, C438S462000, C438S463000

Reexamination Certificate

active

10968100

ABSTRACT:
A method of dividing a wafer along predetermined dividing lines, comprising the steps of a deteriorated layer forming step for applying a pulse laser beam capable of passing through the wafer along the dividing lines to form deteriorated layers in the inside of the wafer along the dividing lines; an extensible protective tape affixing step for affixing an extensible protective tape to one side of the wafer before or after the deteriorated layer forming step; and a dividing step for dividing the wafer along the deteriorated layers by expanding the protective tape affixed to the wafer after the deteriorated layer forming step.

REFERENCES:
patent: 6451152 (2002-09-01), Holmes et al.
patent: 6699774 (2004-03-01), Takyu et al.
patent: 2005/0064683 (2005-03-01), Farnworth et al.
patent: 2002-192367 (2002-07-01), None

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