Wafer dividing method

Details Wafer dividing method Wafer dividing method

2008-06-10

2008-06-10

Smith, Matthew S. (Department: 2823)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

Having specified scribe region structure

C257SE21599, C257SE21602

Reexamination Certificate

active

07384858

ABSTRACT:
A wafer dividing method for dividing a wafer along a first set of plural streets extending parallel to each other, and a second set of plural streets extending parallel to each other and extending perpendicularly to the first set of the streets, the wafer having a plurality of rectangular regions defined on the face thereof by these streets. The wafer dividing method includes a groove forming step of forming grooves along the streets on the face of the wafer, and a grinding step of grinding the back of the wafer after the groove forming step. The grooves formed by the groove forming step include grooves having a first depth D1, and grooves having a second depth D2which is greater than the first depth D1(D2>D1).

REFERENCES:
patent: 2002/0055238 (2002-05-01), Sugino et al.
patent: 2003/0186513 (2003-10-01), Turner et al.
patent: 2005/0233549 (2005-10-01), Eshleman
patent: 2003-17442 (2003-01-01), None

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