Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2005-03-30
2008-11-18
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C257SE21324
Reexamination Certificate
active
07452793
ABSTRACT:
A method of determining wafer curvature in real-time is presented. The method includes establishing a first temperature profile for a hotplate surface, where the hotplate surface is divided into a plurality of temperature control zones. The method further includes positioning a wafer at a first height above the hotplate surface and determining a second temperature profile for the hotplate surface. The wafer curvature is then determined by using the second temperature profile. Also, a dynamic model of a processing system is presented and wafer curvature can be incorporated into the dynamic model.
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European Patent Office, Search Report and Written Opinion for corresponding PCT Application No. PCT/US2006/009019, Jun. 30, 2006, 8 pp.
Kaushal Sanjeev
Pandey Pradeep
Sugishima Kenji
Geyer Scott B.
Stevenson Andre′
Tokyo Electron Limited
Wood Herron & Evans LLP
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