Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1991-04-04
1994-01-25
Niebling, John
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
118729, 118730, 156345, 1984781, 1988038, 20429825, 269254R, 414217, 414225, C23C 1434, C23C 1456
Patent
active
052813207
ABSTRACT:
Semiconductor wafers having patterns of steps and grooves defining microcircuit elements thereon are coated with metallic film by supporting the wafers individually adjacent a respective ring-shaped sputtering source in stationary relationship thereto. To effectuate such individual wafer processing on a continuous basis and preserve the evacuated argon environment, a vacuum chamber sputter coating apparatus is provided which has a number of work stations therein, at least one of which includes said ring-shaped sputtering source. Also included is a load lock, and an intermittently rotting vertical plate-like wafer carrier means therewithin positioned closely adjacent the chamber entrance, and carrying wafers in turn from the load lock to the work stations. The carrier includes apertures each accepting a wafer therewithin in an upright position, with the wafers edgewise resiliently supported by clip means, without the use of any externally-originating supports such as platens. Both surfaces of wafer can be accessed by processing equipment, for example, heating or cooling means at some of the work stations. Only a few wafers inside the chamber are at risk at any one time, and introduction of contaminants, debris, as well as disturbances to the chamber environment minimized.
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Hutchinson Martin A.
Lamont, Jr. Lawrence T.
Shaw R. Howard
Turner Frederick T.
Fisher Gerald M.
Leader W. T.
Niebling John
Varian Associates Inc.
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