Wafer carriers for epitaxial growth processes

Details Wafer carriers for epitaxial growth processes Wafer carriers for epitaxial growth processes

1996-09-30

1999-12-14

Breneman, Bruce

Coating apparatus

Gas or vapor deposition

Having means to expose a portion of a substrate to coating...

118730, C23C 1600

Patent

active

060011831

ABSTRACT:
A wafer carrier/susceptor combination for use in an epitaxial deposition process has a configuration which provides greater thermal conductivity between the susceptor and the wafer carrier in regions substantially underlying the wafers than in regions not underlying the wafers. This difference in thermal conductivity is produced by configuring the wafer carrier or susceptor so that the lower surface of the wafer carrier is disposed closer to the susceptor in regions substantially underlying the wafers than in at least some regions not underlying the wafers. By controlling the thermal conductivity so that it is greater in certain regions than in other regions, the temperature difference between the wafers and the surface of the wafer carrier can be reduced, and a more uniform temperature distribution across the surface of the wafer can be achieved. As a result, the combination may be used to deposit a more uniform coating across the entire surface of each wafer.

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