Wafer burn-in and test system

Electricity: measuring and testing – Measuring – testing – or sensing electricity – per se – With rotor

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Details

324765, 437 8, G01R 3128, G01R 3102

Patent

active

054443660

ABSTRACT:
An interconnection system and method of testing and performing burn-in of semiconductor devices prior to separation from the semiconductor wafer on which the devices are formed includes forming interconnection layers of contacts and conductors over the devices and then testing and performing burn-in on the devices. Faulty devices are disconnected from the conductors prior to performing additional test and burn-in. The interconnections are removed prior to separating the device on the wafer, and prior to further possible tests and packaging.

REFERENCES:
patent: 3803483 (1974-04-01), McMahon, Jr.
patent: 3849872 (1974-11-01), Hubacher
patent: 4281449 (1981-08-01), Ports et al.
patent: 4356379 (1982-10-01), Graeme
patent: 4467400 (1984-08-01), Stopper
patent: 4611385 (1986-09-01), Forrest et al.
patent: 4628590 (1986-12-01), Udo et al.
patent: 4755750 (1988-07-01), Leuschner
patent: 4801869 (1989-01-01), Sprogis
patent: 4956602 (1990-09-01), Parrish
patent: 4961053 (1990-10-01), Krug
patent: 5037771 (1991-08-01), Lipp
patent: 5059899 (1991-10-01), Farnworth et al.
patent: 5241266 (1993-08-01), Ahmad et al.
patent: 5294776 (1994-03-01), Furuyama
"Wafer Burn-In Isolation Circuit", IBM Technical Disclosure Bulletin, vol. 32, No. 6B, Nov. 1989, New York, pp. 442-443.

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