Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead
Reexamination Certificate
2005-03-22
2005-03-22
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
C257S785000, C257S786000, C257S772000
Reexamination Certificate
active
06870262
ABSTRACT:
A method is provided for forming a wafer stack. This may include providing a first wafer having a first plurality of metalized trenches on a surface of the first wafer. A second wafer may be provided having a second plurality of metalized trenches on a surface of the second wafer facing the first wafer. The first plurality of metalized trenches may be solder bonded to the second plurality of metalized trenches.
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Hau-Riege Christine
Hau-Riege Stefan
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Pham Long
LandOfFree
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