Wafer bonding using reactive foils for massively parallel...

Details Wafer bonding using reactive foils for massively parallel... Wafer bonding using reactive foils for massively parallel...

2007-02-13

2007-02-13

Tran, Thien F. (Department: 2811)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S456000

Reexamination Certificate

active

10461291

ABSTRACT:
A method for forming device packages includes forming a perimeter comprising a reactive foil and a bonding material interposed between a first wafer and a second wafer, pressing the first and the second wafers against the reactive foil and the bonding material, initiating the reactive foil, wherein the reactive foil heating the bonding material to create a bond between the first and the second wafers, and singulating the first and the second wafers into the device packages.

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