Wafer bonding using reactive foils for massively parallel...

Details Wafer bonding using reactive foils for massively parallel... Wafer bonding using reactive foils for massively parallel...

2007-04-10

2007-04-10

Nhu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

C257S499000, C257S713000, C257SE21008, C257S059000, C257SE23007, C257S192000

Reexamination Certificate

active

10826800

ABSTRACT:
A method for forming device packages includes forming a perimeter with a reactive foil and a bonding material interposed between a first wafer and a second wafer, pressing the first and the second wafers against the reactive foil and the bonding material, initiating the reactive foil, wherein the reactive foil heats the bonding material to create a bond between the first and the second wafers, and singulating the first and the second wafers into the device packages.

REFERENCES:
patent: 6232150 (2001-05-01), Lin et al.
patent: 6736942 (2004-05-01), Weihs et al.
patent: 6860419 (2005-03-01), Simon
patent: 2001/0046597 (2001-11-01), Weihs et al.

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