Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2007-07-03
2007-07-03
Deo, Duy-Vu N. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S933000, C257S183000, C257S184000, C257S200000
Reexamination Certificate
active
10761918
ABSTRACT:
A method of forming a virtual substrate comprised of an optoelectronic device substrate and handle substrate comprises the steps of initiating bonding of the device substrate to the handle substrate, improving or increasing the mechanical strength of the device and handle substrates, and thinning the device substrate to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. The handle substrate is typically Si or other inexpensive common substrate material, while the optoelectronic device substrate is formed of more expensive and specialized electro-optic material. Using the methodology of the invention a wide variety of thin film electro-optic materials of high quality can be bonded to inexpensive substrates which serve as the mechanical support for an optoelectronic device layer fabricated in the thin film electro-optic material.
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Atwater, Jr. Harry A.
Morral Anna Fontcuberta i
Zahler James M.
California Institute of Technology
Foley & Lardner LLP
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