Wafer assembly having a contrast enhancing top...

Radiation imagery chemistry: process – composition – or product th – Effecting frontal radiation modification during exposure,...

Reexamination Certificate

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C430S004000, C430S311000

Reexamination Certificate

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07855048

ABSTRACT:
A method of fabricating a semiconductor device using lithography. The method can include providing a wafer assembly having a layer to be processed disposed under a photo resist layer and illuminating the wafer assembly with an exposure dose transmitted through a birefringent material disposed between a final optical element of an imaging subsystem used to transmit the exposure dose and the photo resist layer. Also disclosed is a wafer assembly from which at least one semiconductor device can be fabricated. The wafer assembly can include a layer to be processed, a photo resist layer disposed over the layer to be processed and a contrast enhancing, birefringent top anti-reflecting coating (TARC).

REFERENCES:
patent: 6576376 (2003-06-01), Kim
patent: 6599766 (2003-07-01), Tabery et al.
patent: 2002/0012875 (2002-01-01), Pavelchek et al.
patent: 2003/0161029 (2003-08-01), Kurtz et al.
patent: 2004/0165271 (2004-08-01), Krautschik et al.
patent: 2005/0202351 (2005-09-01), Houlihan et al.

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