Wafer applied thermally conductive interposer

Details Wafer applied thermally conductive interposer Wafer applied thermally conductive interposer

2005-04-05

2005-04-05

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Metallic housing or support

C438S584000, C438S113000, C438S455000, C257S706000

Reexamination Certificate

active

06875636

ABSTRACT:
A thermally conductive film is attached to an integrated circuit (IC) wafer through a number of steps. Initially, a thermally conductive film is positioned on a first side of a block. Next, an IC wafer that includes a plurality of chips is positioned with its non-active side in contact with the film. Then, a first surface of an elastomer pad is positioned in contact with an active side of the wafer. Next, a predetermined pressure is applied between a second side of the block that is opposite the first side and a second surface of the elastomer pad that is opposite the first surface. Finally, the film, the block, the wafer and the elastomer pad are heated to a predetermined temperature for a predetermined time while a predetermined pressure is applied to bond the film to the wafer without bonding the film to the block.

REFERENCES:
patent: 4849858 (1989-07-01), Grapes et al.
patent: 5834337 (1998-11-01), Unger et al.
patent: 6442039 (2002-08-01), Schreiber
patent: 20030006501 (2003-01-01), Waki et al.

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