Vortex memory device

Details Vortex memory device Vortex memory device

1985-12-12

1988-08-16

Hecker, Stuart N.

Static information storage and retrieval

Systems using particular element

Superconductive

357 5, 307306, G11C 1144

Patent

active

047648988

ABSTRACT:
The superconducting memory device comprises a thin type-II superconductor film for storing an Abrikosov vortex, a write control line for generating the vortex in the superconductor film, and a vortex detector for detecting a polarity of the vortex stored in the film. The vortex detector includes a Josephson junction and a read control current line. The Josephson junction comprises a base electrode, a counter electrode and a tunnel barrier region sandwiched between the base electrode and the counter electrode. By utilizing a fact that a shift direction of the threshold characteristics of the vortex detector corresponds to the polarity of the vortex stored in the superconductor film, a flux crossing the tunnel barrier region of the Josephson junction due to the stored vortex is detected by the read control line.

REFERENCES:
Applied Physics Letters, vol. 39, No. 12, Dec. 1981, pp. 992-993, "Trapped Vortex Memory Cells" by Shingo Uehara et al.

Affiliated with

Also associated with

Rating

Vortex memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Vortex memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vortex memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-604420