Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2006-07-04
2006-07-04
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S158000, C365S173000
Reexamination Certificate
active
07072208
ABSTRACT:
An MTJ including the free layer and reference layer have a vortex magnetization state that is formed with a clockwise or counterclockwise rotation. The MTJ has a low aspect ratio elliptical shape and the magnetic layers have a dopant that is one of C, N, B, Zr, Ta, Pt, Nb, or Hf to facilitate the flux closure configuration. The vortex magnetization is induced by applying a reverse magnetic field in a direction opposite to the remnant magnetization in a magnetic layer. An anti-ferromagnetic layer is set in an AFM phase after the vortex state is induced in the adjacent reference layer. Switching the vortex state in the free layer involves applying a first field in a first direction to break the vortex and then applying a smaller second field in a reverse direction to a critical point where a vortex of opposite spin is induced.
REFERENCES:
patent: 5650958 (1997-07-01), Gallagher et al.
patent: 6072718 (2000-06-01), Abraham et al.
patent: 6211090 (2001-04-01), Durlam et al.
patent: 6266289 (2001-07-01), Dubovik et al.
patent: 6269018 (2001-07-01), Monsma et al.
patent: 6654278 (2003-11-01), Engel et al.
patent: 6963500 (2005-11-01), Tsang
patent: 2003/0107849 (2003-06-01), Ikarashi
patent: WO03/032336 (2003-04-01), None
“A 0.18 μm Logic-based MRAM Technology for High Performance Nonvolatile Memory Applications”, by A. R. Sitaram et al., MRAM Development Alliance, IBM/ Infineon Tech., IBM Semiconductor Research & Dev. Ctr., Hopewell Jctn, N.Y., USA.
Guo Yimin
Min Tai
Wang Pokang
Ackerman Stephen B.
Headway Technologies Inc.
Luu Pho M.
Nguyen Tuan T.
Saile Ackerman LLC
LandOfFree
Vortex magnetic random access memory does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Vortex magnetic random access memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vortex magnetic random access memory will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3559642