Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2005-10-04
2005-10-04
Nguyen, Van Thu (Department: 2824)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S171000
Reexamination Certificate
active
06952361
ABSTRACT:
In a volumetric data storage apparatus comprising a plurality of stacked matrix-addressable memory devices electrode means are provided so as to form alternating word and bit line means for the memory devices, whereby the number of the electrode means is only one more than the number of memory devices. Moreover adjoining electrode means are arranged in such a manner as to furnish a high proportion of memory cells which can be switched in two or more directions, thus yielding a much higher output when addressed and having an improved signal-to-noise ratio. Each memory device can, due to having a dense electrode arrangement, be provided with an attainable memory cell fill factor approaching unity and half the memory cells can in case be provided switchable in two or more directions, such that the fill factor of these in any case shall approach 0.5. A volumetric data storage apparatus with a very high storage density can hence be obtained, while several of the problems encountered with stacked memory devices are obviated.
REFERENCES:
patent: 6775173 (2004-08-01), Gudesen
patent: 2003/0001151 (2003-01-01), Li et al.
patent: 2003/0056078 (2003-03-01), Johansson et al.
Gudesen Hans Gude
Leistad Geirr I.
Birch & Stewart Kolasch & Birch, LLP
Luu Pho M.
Nguyen Van Thu
Thin Film Electronics
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