Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-10-15
1992-12-22
Griffin, Donald A.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
361280, 257312, 437180, 437235, H01G 700, H01L 1700
Patent
active
051738350
ABSTRACT:
A voltage variable capacitor (10) has as the base substrate a silicon wafer with a layer of high resistivity semiconductor material on top of the substrate. An insulating layer (16) of a metal oxide having a dielectric constant greater than the dielectric constant of the semiconductors (12), such as zirconium titanate, is formed on top of the high resistivity layer, and a metal electrode (18) is formed on the insulating layer (16). When the electrode is energized, a depletion layer (20) is formed in the high resistivity layer. By varying the voltage applied to the electrode, the capacitance of the device is altered.
REFERENCES:
patent: 3202891 (1965-08-01), Frankl
patent: 3512052 (1970-05-01), MacIver et al.
patent: 3634738 (1972-01-01), Leith et al.
patent: 3648340 (1972-03-01), MacIver
patent: 3809971 (1974-05-01), Hluchan et al.
patent: 3890635 (1975-06-01), Engeler
patent: 4005466 (1977-01-01), Dawson
patent: 4782350 (1988-11-01), Smith et al.
Caldwell Raymond M.
Cornett Kenneth D.
Howng Wei-Yean
Ramakrishnan E. S.
Shapiro Gary H.
Dorinski Dale W.
Griffin Donald A.
Motorola Inc.
LandOfFree
Voltage variable capacitor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Voltage variable capacitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Voltage variable capacitor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-977984