Voltage supply switching device for nonvolatile memories in MOS

Details Voltage supply switching device for nonvolatile memories in MOS Voltage supply switching device for nonvolatile memories in MOS

1988-11-22

1991-03-26

Bowler, Alyssa H.

Static information storage and retrieval

Read/write circuit

Including signal comparison

36518909, 365226, 3072968, G11C 700, G11C 1140, G11C 800

Patent

active

050035118

ABSTRACT:
Two P channel selection transistors are inserted in respective connecting circuit branches between two external pins with voltages Vcc and Vpp respectively and an internal node. A switching circuit controls said selection transistors. Circuit means are provided to hold the body bias of the selection transistors at a voltage equal to the highest voltage present from time to time at said external pins.

REFERENCES:
patent: 4565960 (1986-01-01), Takata et al.
patent: 4833343 (1989-05-01), Fuchs

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