Static information storage and retrieval – Read/write circuit – Including level shift or pull-up circuit
Reexamination Certificate
2006-05-30
2010-02-16
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including level shift or pull-up circuit
C365S222000
Reexamination Certificate
active
07663939
ABSTRACT:
A memory module is disclosed. The memory module comprises a voltage supply; a memory interface coupled to the voltage supply; a plurality of memory components; and a voltage stabilizer converter (VSC) coupled to the memory interface and to the plurality of memory components, the VSC for ensuring that the plurality of memory components operate at their optimum performance level. A voltage stabilizer memory module (VSMM) in accordance with the present invention includes a printed circuit board (PCB) that contains memory chips, discrete components, a voltage stabilizer converter, and other related components. The voltage stabilizer converter uses system voltage supply as its input and its output is the voltage supply for the DRAM components. Accordingly, the VSSM is more adaptable, more stable and has better performance than conventional memory modules.
REFERENCES:
patent: 6751113 (2004-06-01), Bhakta et al.
patent: 6856556 (2005-02-01), Hajeck
patent: 2006/0206673 (2006-09-01), Lu et al.
patent: 2006/0245254 (2006-11-01), Ishii et al.
Le Ngoc
Nguyen Henry
Ho Hoai V
Kingston Technology Corporation
Lappas Jason
Sawyer Law Group P.C.
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