Voltage source and memory-voltage switch in a memory chip

Details Voltage source and memory-voltage switch in a memory chip Voltage source and memory-voltage switch in a memory chip

1997-06-12

1998-11-24

Dinh, Son T.

Static information storage and retrieval

Powering

36518907, 327545, 327538, G11C 700

Patent

active

058417249

ABSTRACT:
A circuit for connecting a memory cell matrix to voltage sources includes a voltage sensor responsive to the voltage levels of a first voltage source and of a second voltage source by producing a sense signal, and a voltage source coupler connected between the memory cell matrix and the voltage sensor. When the first voltage source voltage level is greater than a predetermined threshold voltage level, the sense signal causes the voltage source coupler to drive the first voltage source voltage level into the memory cell matrix. When the first voltage source voltage level falls to the threshold voltage level, the sense signal also causes the voltage source coupler to drive the second voltage source voltage level into the memory cell matrix to sustain memory cell data.

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ES62B256-45 Preliminary Data Sheet, Enable Semiconductor, Inc., 1740 Technology Drive, Suite 110, San Jose, CA 95110, Sep. 1996, pp. 1-9.

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