Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2011-06-14
2011-06-14
Tran, Andrew Q (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S189070, C365S208000, C365S207000, C327S541000, C327S537000, C327S535000
Reexamination Certificate
active
07961531
ABSTRACT:
Herein, a voltage sensing circuit, which is capable of controlling a pumping voltage to be stably generated in a low voltage environment, is provided. The voltage sensing circuit includes a current mirror having first and second terminals, a first switching element configured to control current on the first terminal of the current mirror by a reference voltage, a second switching element configured to control current from the second terminal of the current mirror in response to a pumping voltage, and a third switching element configured to control current sources of the first and second switching elements to receive a negative voltage.
REFERENCES:
patent: 6088270 (2000-07-01), Hardee
patent: 7023262 (2006-04-01), Sim et al.
patent: 2006/0158946 (2006-07-01), Taddeo
patent: 2007/0097768 (2007-05-01), Barth, Jr.
patent: 1998-0074416 (1998-11-01), None
patent: 1020060127315 (2006-12-01), None
Notice of Allowance issued from Korean Intellectual Property Office on May 30, 2009 with an English Translation.
Han Woo-Seung
Kang Khil-Ohk
Hynix / Semiconductor Inc.
IP & T Group LLP
Tran Andrew Q
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