Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2008-05-13
2008-05-13
Hur, J. H. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S226000, C327S540000, C323S313000, C323S315000
Reexamination Certificate
active
11549885
ABSTRACT:
System and method for controlling voltage in a non-volatile memory system is provided. The system includes a voltage regulator that monitors an output voltage (VDD) and a mirror voltage (Vmirror). When the voltage VDD is greater than the voltage Vmirror beyond a threshold value, a control signal turns off a control transistor, which prevents the voltage VDD to increase beyond a certain value. The method includes comparing an output voltage (VDD) with a mirror voltage (Vmirror); and generating a control signal to turn off a control transistor if the voltage VDD is greater than the voltage Vmirror.
REFERENCES:
patent: 4670861 (1987-06-01), Shu et al.
patent: 5570315 (1996-10-01), Tanaka et al.
patent: 5774397 (1998-06-01), Endoh et al.
patent: 6046935 (2000-04-01), Takeuchi et al.
patent: 6373746 (2002-04-01), Takeuchi et al.
patent: 6456528 (2002-09-01), Chen
patent: 6522580 (2003-02-01), Chen et al.
patent: 6771536 (2004-08-01), Li et al.
patent: 6781877 (2004-08-01), Cernea et al.
patent: 6815941 (2004-11-01), Butler
patent: 6876182 (2005-04-01), Aude
patent: 2002/0196692 (2002-12-01), Fiscus
patent: 2003/0147278 (2003-08-01), Tanaka et al.
patent: 2004/0150381 (2004-08-01), Butler
patent: 2004/0245977 (2004-12-01), Tran
patent: 2005/0134242 (2005-06-01), Gradinariu
Rincon-Mora, et al., “A low voltage, low quiescent current, low drop-out regulator”,IEEE Journal of Solid State Circuits, vol. 33, No. 1, Jan. 1998, 36-44.
Rincon-Mora, Gabriel A., et al., “Current Efficient, Low Voltage, Low Drop Out Regulator”,PhD Thesis; Georgia Institute of Technology 1996.
Hur J. H.
Klein O'Neill & Singh, LLP
Sandisk Corporation
Singh Tejinder
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