Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2007-12-10
2009-08-18
Lam, David (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S189070, C365S189110, C365S207000
Reexamination Certificate
active
07577043
ABSTRACT:
A voltage regulator in a semiconductor memory has: a comparing unit including first and second bias current sources, for comparing an output voltage with first and second reference voltages under control of a first signal, the second bias current source being ON under control of a second signal; and a driver active element, coupled to the comparing unit, for outputting the output voltage. Before sensing operations, the output voltage is reset to the second reference voltage. During the sensing operations, the output voltage is maintained at the first reference voltage and the second signal is asserted for turning ON the second bias current source for raising speed of the comparing unit. After the sensing operations, the output voltage is reset to the second reference voltage.
REFERENCES:
patent: 5909402 (1999-06-01), Joo
patent: 6195298 (2001-02-01), Furutani et al.
Chou Min-Chung
Yao Tse-Hua
Elite Semiconductor Memory Technology Inc.
Jianq Chyun IP Office
Lam David
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