Static information storage and retrieval – Powering
Patent
1996-02-05
1998-03-10
Fears, Terrell W.
Static information storage and retrieval
Powering
36518901, G11C 1300
Patent
active
057269440
ABSTRACT:
An SRAM memory cell (10) is provided a boosted voltage by a charge pump (56) to reduce the soft error rate within the SRAM (10) and to improve bit cell stability. A voltage regulator (58) is coupled to the charge pump (56) to regulate the operation of the charge pump (56) and its outputted boosted voltage. The voltage regulator (58) regulates the boosted voltage over three operating states: low supply voltage, steady state operation, and burn-in.
REFERENCES:
patent: 4903236 (1990-02-01), Nakayama
patent: 5303190 (1994-04-01), Pelley, III
patent: 5381051 (1995-01-01), Morton
Pelley III Perry H.
Taft Robert C.
Fears Terrell W.
Hayden Bruce E.
Motorola Inc.
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