Method of fabricating a bipolar transistor with ultra-thin epita

Details Method of fabricating a bipolar transistor with ultra-thin epita Method of fabricating a bipolar transistor with ultra-thin epita

1989-02-13

1991-06-18

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 33, 437 91, 437 99, 437909, 437203, 148DIG11, 148DIG154, H01L 21306

Patent

active

050249576

ABSTRACT:
A method of forming a bipolar transistor is provided, comprising the steps of: providing a semiconductor substrate including a first region of a first conductivity type; forming a layer of insulative material over a surface of the first region; forming a layer of conductive material over the layer of insulative material; patterning the first and second layers to form a generally vertical sidewall bounding an exposed portion of the first region surface; and epitaxially depositing a base region of a second conductivity type over the exposed portion of the first region surface and the sidewall such that the base region is in electrical contact with the second region.

REFERENCES:
patent: 3600651 (1971-08-01), Duncan
patent: 4319932 (1982-03-01), Jambotkar
patent: 4495512 (1985-01-01), Isaac et al.
patent: 4504332 (1985-03-01), Shinada
patent: 4701998 (1987-10-01), Ahlgren et al.
patent: 4830972 (1989-05-01), Hamasaki
Ho et al., "Polysilicon-Base Self-Aligned Bipolar Transistors Process and Structure", Defensive Publication T104, 102, 4/84.

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